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savantic semiconductor product specification silicon npn power transistors 2SC4517 2SC4517a d escription with to-220f package high voltage switching transistor applications for switching regulator and general purpose applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit 2SC4517 900 v cbo collector-base voltage 2SC4517a open emitter 1000 v v ceo collector-emitter voltage open base 550 v v ebo emitter-base voltage open collector 7 v i c collector current 3 a i cm collector current-pulse 6 a i b base current 1.5 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC4517 2SC4517a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ; i b =0 550 v v cesat collector-emitter saturation voltage i c =1a; i b =0.2a 0.5 v v besat base-emitter saturation voltage i c =1a; i b =0.2a 1.2 v i cbo collector cut-off current v cb =800v; i e =0 100 a i ebo emitter cut-off current v eb =7v; i c =0 100 a h fe dc current gain i c =1a ; v ce =4v 10 30 c ob output capacitance i e =0; v cb =10v;f=1mhz 35 pf f t transition frequency i e =-0.25a ; v ce =12v 6 mhz switching times t on turn-on time 0.7 s t s storage time 4.0 s t f fall time i c =1.0a i b1 =0.15a i b2 =-0.45a v cc =250v ,r l =250 b 0.5 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC4517 2SC4517a package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon npn power transistors 2SC4517 2SC4517a

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